Factory Lead Time  

14 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Number of Pins  

7

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

370W Tc

Turn Off Delay Time  

100 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

240A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2005

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

6

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

2.6MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G6

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

370W

Case Connection  

DRAIN

Turn On Delay Time  

17 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.6m Ω @ 160A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

9200pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

240nC @ 10V

Rise Time  

80ns

Vgs (Max)  

±20V

Fall Time (Typ)  

64 ns

Reverse Recovery Time  

52 ns

Continuous Drain Current (ID)  

260A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

240A

Drain to Source Breakdown Voltage  

75V

Dual Supply Voltage  

75V

Avalanche Energy Rating (Eas)  

320 mJ

Nominal Vgs  

4 V

Length  

10.668mm

Width  

9.65mm

Height  

4.572mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free